Silicon carbide wafer and method of manufacturing same
US12037704B2 · kind B2 · utility
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2References
14Claims
0Family size
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Key dates
| Filing date | Nov 4, 2022 |
| Grant date | Jul 16, 2024 |
| Priority date | — |
| Expiry date | Nov 4, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02008
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed are a silicon carbide wafer and a method of manufacturing the same. The silicon carbide wafer includes an upper surface and a lower surface, the upper surface includes a first target region, the first target region being within 85% of a radius of the upper surface based on a center of the upper surface, a first peak omega angle measured at intervals of 15 mm in a first direction in the first target region is within −1° to +1° based on a peak omega angle measured at the center of the upper surface, and the first direction is a [1-100] direction and a direction passing through the center of the upper surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.