Patent · US Active

Reflective mask and fabricating method thereof

US12038684B2 · kind B2 · utility

0Cited by

14References

20Claims

0Family size

Assignee

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

Tsiao-Chen Wu · Hsinchu, TW
Pei-Cheng Hsu · Taipei, TW

Key dates

Filing date	Mar 22, 2023
Grant date	Jul 16, 2024
Priority date	—
Expiry date	Mar 22, 2043

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/82
WIPO fieldOptics
WIPO sectorInstruments

Abstract

The prevent disclosure provides a method for forming a reflective mask. In some embodiments, the method includes forming a carbon-containing layer over a substrate; forming a reflective multilayer over the carbon-containing layer; forming an absorption pattern over the reflective multilayer. In some embodiments, the method includes growing a light absorbing layer over a substrate; polishing the light absorbing layer; forming a reflective layer over the polished light absorbing layer; forming an absorption pattern over the reflective layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.