Method for manufacturing semiconductor structure with resistive elements
US12040178B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2023 |
| Grant date | Jul 16, 2024 |
| Priority date | — |
| Expiry date | Apr 26, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/47
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure and method for manufacturing the same are provided. The method includes forming a first resistive element over a substrate, and the first resistive element has a first sidewall extending in a first direction and a second sidewall opposite to the first sidewall and extending in the first direction. The method further includes forming a first conductive feature and a second conductive feature over and electrically connected to the first resistive element and forming a second resistive element over the first resistive element and spaced apart from the first resistive element in a second direction. In addition, the second resistive element is located between the first sidewall and the second sidewall of the first resistive element in a top view, and the first resistive element and the second resistive element are made of different nitrogen-containing materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.