Microfluidic channels sealed with directionally-grown plugs
US12040252B2 · kind B2 · utility
0Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2022 |
| Grant date | Jul 16, 2024 |
| Priority date | — |
| Expiry date | Oct 12, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/687
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Structures for a microfluidic channel and methods of forming a structure for a microfluidic channel. The structure comprises a trench in a semiconductor substrate and a semiconductor layer inside the trench. The trench has an entrance and a sidewall extending from the entrance into the semiconductor substrate. The semiconductor layer has a first portion surrounding a portion of the trench to define a cavity and a second portion positioned to obstruct the entrance to the trench. The second portion of the semiconductor layer is thicker than the first portion of the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.