Fabricating sub-micron contacts to buried well devices
US12040366B2 · kind B2 · utility
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3References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 8, 2021 |
| Grant date | Jul 16, 2024 |
| Priority date | — |
| Expiry date | Apr 12, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor structure. Two isolation structures are formed in a semiconductor. A cavity is etched in the semiconductor between the two isolation structures in the semiconductor. Dopants are implanted into a bottom side of the cavity to form a doped region in the semiconductor below the cavity between the two isolation structures. A contact is formed in the cavity. The contact is on the doped region and in direct contact with the doped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.