Wonill Ha
23Patents
10h-index
30Co-inventors
75Inventor score
Filing activity: Jul 16, 2002 → Oct 10, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7285807B2 | Semiconductor device having substrate-driven field-effect transistor and Schottky diode and method of forming the same | Electricity | 45 | Expired |
| US7339208B2 | Semiconductor device having multiple lateral channels and method of forming the same | Electricity | 45 | Expired |
| US7462891B2 | Semiconductor device having an interconnect with sloped walls and method of forming the same | Electricity | 36 | Expired |
| US7663183B2 | Vertical field-effect transistor and method of forming the same | Electricity | 34 | Active |
| US7655963B2 | Semiconductor device including a lateral field-effect transistor and Schottky diode | Electricity | 29 | Active |
| US7439557B2 | Semiconductor device having a lateral channel and contacts on opposing surfaces thereof | Electricity | 26 | Expired |
| US7541640B2 | Vertical field-effect transistor and method of forming the same | Electricity | 22 | Active |
| US6798809B1 | GaInNAsSb quantum well semiconductor devices | Electricity | 17 | Expired |
| US8415737B2 | Semiconductor device with a pillar region and method of forming the same | Electricity | 13 | Active |
| US7504673B2 | Semiconductor device including a lateral field-effect transistor and Schottky diode | Electricity | 10 | Active |
| US7564074B2 | Semiconductor device including a lateral field-effect transistor and Schottky diode | Electricity | 9 | Active |
| US7642568B2 | Semiconductor device having substrate-driven field-effect transistor and Schottky diode and method of forming the same | Electricity | 6 | Active |
| US7675090B2 | Semiconductor device having a contact on a buffer layer thereof and method of forming the same | Electricity | 6 | Active |
| US9087854B1 | Thermal management for heterogeneously integrated technology | Electricity | 6 | Active |
| US7838905B2 | Semiconductor device having multiple lateral channels and method of forming the same | Electricity | 6 | Active |
| US9515068B1 | Monolithic integration of GaN and InP components | Electricity | 5 | Active |
| US9530708B1 | Flexible electronic circuit and method for manufacturing same | Electricity | 4 | Active |
| US7645626B2 | Multiple GaInNAs quantum wells for high power applications | Electricity | 2 | Active |
| US9691761B1 | Monolithic integration of GaN and InP components | Electricity | 0 | Active |
| US11823864B1 | Embedded high-Z marker material and process for alignment of multilevel ebeam lithography | Electricity | 0 | Active |
| US12255047B1 | Embedded high-z marker material and process for alignment of multilevel ebeam lithography | Electricity | 0 | Active |
| US12040366B2 | Fabricating sub-micron contacts to buried well devices | Electricity | 0 | Active |
| US10056340B1 | Flexible electronic circuit and method for manufacturing same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.