High voltage extended-drain MOS (EDMOS) nanowire transistors

US12040395B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Nidhi Nidhi · Hillsboro, US
• Rahul Ramaswamy · Portland, US
• Walid M. Hafez · Portland, US
• Hsu-Yu Chang · Hillsboro, US
• Ting Chang · Portland, US
• Babak Fallahazad · Portland, US
• Tanuj Trivedi · Hillsboro, US
• Jeong Dong Kim · Scappoose, US

Key dates

• Filing date: Dec 13, 2019
• Grant date: Jul 16, 2024
• Expiry date: Sep 13, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/159

Abstract

Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment a semiconductor device comprises a substrate, a source region over the substrate, a drain region over the substrate, and a semiconductor body extending from the source region to the drain region. In an embodiment, the semiconductor body has a first region with a first conductivity type and a second region with a second conductivity type. In an embodiment, the semiconductor device further comprises a gate structure over the first region of the semiconductor body, where the gate structure is closer to the source region than the drain region.