Semiconductor device and method of forming the same
US12040412B2 · kind B2 · utility
0Cited by
1References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2021 |
| Grant date | Jul 16, 2024 |
| Priority date | — |
| Expiry date | May 9, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor device including a substrate, multiple first gate structures, and a protective structure. The substrate includes a first region and a second region. The first gate structures are disposed on the substrate in the first region. The protective structure conformally covers a sidewall of one of the first gate structures adjacent to the second region. The protective structure includes a lower portion and an upper portion disposed on the lower portion. The lower portion and the upper portion have different dielectric materials. A method of forming a semiconductor device is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.