Deposition method of a metallic layer on a substrate of a resonator device
US12043891B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2021 |
| Grant date | Jul 23, 2024 |
| Priority date | — |
| Expiry date | Jan 9, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/14538
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Sputter depositing a metallic layer on a substrate in the fabrication of a resonator device includes providing a magnetron sputtering apparatus comprising a chamber, a substrate support disposed within the chamber, a target made from a metallic material, and a plasma generating device, wherein the substrate support and the target are separated by a distance of 10 cm or less; supporting the substrate on the substrate support; performing a DC magnetron sputtering step that comprises sputtering the metallic material from the target onto the substrate so as to form a metallic layer on the substrate, wherein during the DC magnetron sputtering step the chamber has a pressure of at least 6 mTorr of a noble gas, the target is supplied with a power having a power density of at least 6 W/cm2, and the substrate has a temperature in the range of 200-600° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.