Wet etching chemistry and method of forming semiconductor device using the same
US12046476B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 25, 2022 |
| Grant date | Jul 23, 2024 |
| Priority date | — |
| Expiry date | May 13, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76829
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wet etching chemistry to selectively remove a polymer residue on an opening embedded in a low-k dielectric layer and an underlying stop layer in a process of forming an interconnect structure is provided. The wet etching chemistry includes: two type of organic solvents, wherein a concentration of the two type of organic solvents is greater than or equal to 70%; an Alkali source amine, at least comprising a tertiary amine; an inhibitor; and water. In some embodiment, the wet etching chemistry is free of a peroxide to avoid damage to the WdC hard mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.