Semiconductor device and manufacturing method thereof
US12046593B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 25, 2020 |
| Grant date | Jul 23, 2024 |
| Priority date | — |
| Expiry date | Jan 8, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/84
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a semiconductor device and a fabrication method thereof. The semiconductor device includes a substrate, a first nitride semiconductor layer disposed on the substrate, a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a bandgap greater than that of the first nitride semiconductor layer. The semiconductor device further includes a first gate conductor disposed on a first region of the second nitride semiconductor layer, a passivation layer covering the first gate conductor, and a second gate conductor disposed on the passivation layer and on a second region of the second nitride semiconductor layer, wherein the first region is laterally spaced apart from the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.