Image sensing device with gate dielectric portion varying thickness that increases along migration path of photocharges
US12046606B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Nov 30, 2021 |
| Grant date | Jul 23, 2024 |
| Priority date | — |
| Expiry date | Jan 18, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensing device is provided to include: a substrate including a photoelectric conversion layer configured to generate photocharges corresponding to the intensity of incident light; a plurality of doping regions disposed along a migration path of the photocharges and doped with dopants in different doping concentrations; and a gate dielectric layer disposed over the substrate and having a gate dielectric layer portion overlapping the plurality of doping regions, the gate dielectric layer portion having a varying thickness that increases along the migration path of the photocharges.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.