Vertical memory devices

US12048153B2 · kind B2 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Qiangwei Zhang · 红钢城街道, CN
• Jingjing Geng · 红钢城街道, CN
• Bin Yuan · 红钢城街道, CN
• Xiangning Wang · 红钢城街道, CN
• Chen Zuo · Beijing, CN
• Zhu Yang · 红钢城街道, CN
• Liming Cheng · Shanghai, CN
• Zhen Guo · Shanghai, CN

Key dates

• Filing date: Mar 26, 2021
• Grant date: Jul 23, 2024
• Expiry date: Nov 11, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B41/27

Abstract

Aspects of the disclosure provide semiconductor devices. For example, a semiconductor device includes a substrate having a first region and a second region along a first direction that is parallel to a main surface of the substrate. Then, the semiconductor device includes a memory stack that includes a first stack of alternating gate layers and insulating layers and a second stack of alternating gate layers and insulating layers along a second direction that is perpendicular to the main surface of the substrate. Further, the semiconductor device includes a joint insulating layer in the second region and a third stack of alternating gate layers and insulating layers in the first region between the first stack of alternating gate layers and insulating layers and the second stack of alternating gate layers and insulating layers.