Compositions and methods using same for deposition of silicon-containing film
US12049695B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Sep 18, 2018 |
| Grant date | Jul 30, 2024 |
| Priority date | — |
| Expiry date | Sep 18, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02348
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Compositions for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the composition comprises at least one compound is selected from the group consisting of a siloxane, a trisilylamine-based compound, and a cyclic trisilazane compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.