Patent · US Active

Data storage device with noise injection

US12051482B2 · kind B2 · utility

1Cited by
10References
32Claims
0Family size

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Key dates

Filing dateJun 22, 2022
Grant dateJul 30, 2024
Priority date
Expiry dateSep 9, 2042

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C16/26
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Noise injection procedures implemented on the die of a non-volatile memory (NVM) array are disclosed. In one example, noise is injected into data by adjusting read voltages to induce bit flips while using feedback to achieve a target amount of information degradation. In another example, random data is iteratively combined with itself to achieve a target percentage of random 1s or 0s, then the random data is combined with data read from the NVM array. In other examples, pixels are randomly zeroed out to emulate dead charge coupled device (CCD) pixels. In still other examples, the timing, voltage, and/or current values used within circuits while transferring data to/from latches or bitlines are adjusted outside their specified margins to induce bit flips to inject noise into the data. The noise-injected data may be used, for example, for dataset augmentation or for the testing of deep neural networks (DNNs).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.