RF current measurement in semiconductor processing tool
US12051630B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2019 |
| Grant date | Jul 30, 2024 |
| Priority date | — |
| Expiry date | Sep 24, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/332
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of plasma-assisted semiconductor processing in multiple stations in a process chamber is provided. The method comprises: a) providing substrates at each of the multiple stations; b) distributing RF power to multiple stations to thereby generate a plasma in the station, wherein the RF power is distributed according to a RF power parameter that is adjusted to reduce station to station variations; c) tuning a frequency of the RF power, wherein tuning the frequency includes: i) measuring a current of the plasma; ii) determining, according to the current measured in (i), a change to the frequency of the RF power, and iii) adjusting the frequency of the RF power; and d) performing a semiconductor processing operation on the substrate at each station.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.