Semiconductor devices having conductive pad structures with multi-barrier films
US12051659B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2023 |
| Grant date | Jul 30, 2024 |
| Priority date | — |
| Expiry date | May 10, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00015
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices are provided. The semiconductor device includes a substrate, an interconnect structure, and a conductive pad structure. The interconnect structure is over the substrate and includes a top metal layer. The conductive pad structure is over the interconnect structure and includes a lower barrier film, an upper barrier film, and an aluminum-containing layer. The lower barrier film is on the top metal layer. The upper barrier film is on the lower barrier film and has an amorphous structure. The aluminum-containing layer is on the upper barrier film. The lower barrier film and the upper barrier film are made of a same material, and a nitrogen atomic percentage of the upper barrier film is higher than a nitrogen atomic percentage of the lower barrier film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.