Optoelectronic semiconductor component with a current spreading structure containing silver, and optoelectronic device

US12051768B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Fabian Kopp · Bukit Mertajam, MY
• Attila Molnar · Vadnais Heights, US
• Franz Eberhard · Kilchberg, CH

Key dates

• Filing date: Jul 11, 2019
• Grant date: Jul 30, 2024
• Expiry date: Jul 1, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/034

Abstract

An optoelectronic semiconductor component comprises a first semiconductor layer of a first conductivity type having a first main surface and a second semiconductor layer of a second conductivity type arranged on a side facing away from the first main surface of the first semiconductor layer. The optoelectronic semiconductor component further comprises, on the side of the first main surface, a first current spreading structure electrically connected to the first semiconductor layer and a second current spreading structure electrically connected to the second semiconductor layer. The optoelectronic semiconductor component furthermore includes a dielectric mirror layer arranged on the side of the first main surface of the first semiconductor layer and on a side of the first or second current spreading structure facing away from the first semiconductor layer. At least one of the first and second current spreading structures contains silver.