Photoresist layer surface treatment, cap layer, and method of forming photoresist pattern
US12057315B2 · kind B2 · utility
0Cited by
17References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 31, 2023 |
| Grant date | Aug 6, 2024 |
| Priority date | — |
| Expiry date | May 31, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3086
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate, and reducing moisture or oxygen absorption characteristics of the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.