Semiconductor device manufacture with in-line hotspot detection
US12057355B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2020 |
| Grant date | Aug 6, 2024 |
| Priority date | — |
| Expiry date | Aug 22, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P90/02
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Controlling semiconductor device manufacture by acquiring training scatterometric signatures collected at training locations on training semiconductor wafers and corresponding to locations within a predefined design of a training semiconductor device, the training signatures collected after predefined processing steps during manufacture of the device on the training wafers, acquiring manufacturing outcome data associated with the training locations, training a prediction model using the training signatures and the manufacturing outcome data, and applying the prediction model to a candidate scatterometric signature to predict a manufacturing outcome, the candidate signature collected at a candidate location on a candidate semiconductor wafer, the candidate location corresponding to a location within the same predefined design of a candidate semiconductor device, the candidate signature collected after any of the processing steps during manufacture of the candidate device on the candidate wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.