Semiconductor devices
US12057470B2 · kind B2 · utility
0Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2022 |
| Grant date | Aug 6, 2024 |
| Priority date | — |
| Expiry date | Feb 4, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/711
Abstract
A semiconductor device includes a capacitor. The capacitor includes a bottom electrode, a dielectric layer, and a top electrode that are sequentially stacked in a first direction. The dielectric layer includes a first dielectric layer and a second dielectric layer that are interposed between the bottom electrode and the top electrode and are stacked in the first direction. The first dielectric layer is anti-ferroelectric, and the second dielectric layer is ferroelectric. A thermal expansion coefficient of the first dielectric layer is greater than a thermal expansion coefficient of the second dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.