Photon avalanche diode having first, second, and third diodes formed in a semiconductor body
US12057517B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 23, 2022 |
| Grant date | Aug 6, 2024 |
| Priority date | — |
| Expiry date | Dec 18, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2001/4466
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A photon avalanche diode includes: first, second, and third diodes formed in a semiconductor body, the second diode being a photodiode; a main cathode terminal connected to the cathode of the first diode; a main anode terminal connected to the anode of the third diode; an auxiliary cathode terminal connected to the cathode of the second and third diodes; and an auxiliary anode terminal connected to the anode of the first and second diodes. The main anode terminal is electrically connected to ground or a reference potential. The main cathode terminal is electrically connected to a voltage which causes a photocarrier multiplication region to form within the semiconductor body. The auxiliary anode terminal is electrically connected to ground or to a read-out circuit. The auxiliary cathode terminal is electrically connected to a constant bias voltage less than a voltage applied to the main cathode terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.