Patent · US Active

Substrate processing device, manufacturing method for semiconductor device, and reaction tube

US12062546B2 · kind B2 · utility

0Cited by
0References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 3, 2021
Grant dateAug 13, 2024
Priority date
Expiry dateApr 30, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/67248
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A substrate processing apparatus includes: a substrate holding member configured to hold a plurality of substrates; a reaction tube configured to accommodate the substrate holding member and process the substrates; a processing gas supply system configured to supply a processing gas into the reaction tube; and an exhaust system configured to exhaust an internal atmosphere of the reaction tube. The reaction tube includes: a cylindrical portion; a gas supply area formed outside one side wall of the cylindrical portion and connected to the processing gas supply system; and a gas exhaust area formed outside the other side wall of the cylindrical portion opposed to the gas supply area and connected to the exhaust system. Each of the gas supply area and the gas exhaust area has an inner wall which partitions the interior of each of the gas supply area and the gas exhaust area into a plurality of spaces.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.