Beryllium doped GaN-based light emitting diode and method
US12062738B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Sep 14, 2022 |
| Grant date | Aug 13, 2024 |
| Priority date | — |
| Expiry date | Sep 14, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8252
Abstract
The invention described herein provides a method and apparatus to realize incorporation of Beryllium followed by activation to realize p-type materials of lower resistivity than is possible with Magnesium. Lower contact resistances and more effective electron confinement results from the higher hole concentrations made possible with this invention. The result is a higher efficiency GaN-based LED with higher current handling capability resulting in a brighter device of the same area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.