James R. Shealy
23Patents
8h-index
10Co-inventors
72Inventor score
Filing activity: Jul 27, 1979 → Apr 20, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6150680A | Field effect semiconductor device having dipole barrier | Electricity | 101 | Expired |
| US7250360B2 | Single step, high temperature nucleation process for a lattice mismatched substrate | Electricity | 96 | Expired |
| US4262296A | Vertical field effect transistor with improved gate and channel structure | Electricity | 52 | Expired |
| US4343015A | Vertical channel field effect transistor | Electricity | 44 | Expired |
| US8791034B2 | Chemical vapor deposition process for aluminum silicon nitride | Electricity | 26 | Active |
| US6478871B1 | Single step process for epitaxial lateral overgrowth of nitride based materials | Electricity | 22 | Expired |
| US4564509A | Method and apparatus for improved gettering for reactant gases | Chemistry; Metallurgy | 19 | Expired |
| US5003548A | High power (1,4 W)AlGaInP graded-index separate confinement heterostructure visible (.lambda.-658 nm) laser | Electricity | 18 | Expired |
| US5834379A | Process for synthesis of cubic GaN on GaAs using NH.sub.3 in an RF plasma process | Chemistry; Metallurgy | 7 | Expired |
| US9299821B2 | Gated III-V semiconductor structure and method | Electricity | 2 | Active |
| US9991360B2 | Method for forming III-V semiconductor structures including aluminum-silicon nitride passivation | Electricity | 1 | Active |
| US11469348B1 | Beryllium doped GaN-based light emitting diode and method | Electricity | 1 | Active |
| US12062738B2 | Beryllium doped GaN-based light emitting diode and method | Electricity | 0 | Active |
| US11692510B2 | Plunger seal assembly and sealing method | Mechanical Engineering; Lighting; Heating | 0 | Active |
| US12046699B2 | Beryllium doped GaN-based light emitting diode and method | Electricity | 0 | Active |
| US9306050B2 | III-V semiconductor structures including aluminum-silicon nitride passivation | Electricity | 0 | Active |
| US11652165B2 | Vertical field effect transistor device and method of fabrication | Electricity | 0 | Active |
| US11674447B2 | Skirted seal apparatus | Mechanical Engineering; Lighting; Heating | 0 | Active |
| US11719191B2 | Skirted leaf seal apparatus | Mechanical Engineering; Lighting; Heating | 0 | Active |
| US12068161B1 | Method for implant and anneal for high voltage field effect transistors | Electricity | 0 | Active |
| US11703014B2 | Flexurally actuated self-sealing plunger apparatus | Mechanical Engineering; Lighting; Heating | 0 | Active |
| US11251295B1 | Vertical field effect transistor device and method of fabrication | Electricity | 0 | Active |
| US11942537B2 | Vertical field effect transistor device and method of fabrication | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.