Integrated assemblies having metal-containing liners along bottoms of trenches, and methods of forming integrated assemblies
US12063782B2 · kind B2 · utility
0Cited by
6References
13Claims
0Family size
Inventors
Key dates
| Filing date | Sep 9, 2022 |
| Grant date | Aug 13, 2024 |
| Priority date | — |
| Expiry date | Sep 9, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Some embodiments include methods of forming integrated assemblies. A conductive structure is formed to include a semiconductor-containing material over a metal-containing material. An opening is formed to extend into the conductive structure. A conductive material is formed along a bottom of the opening. A stack of alternating first and second materials is formed over the conductive structure either before or after forming the conductive material. Insulative material and/or channel material is formed to extend through the stack to contact the conductive material. Some embodiments include integrated assemblies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.