Collin Howder
48Patents
6h-index
42Co-inventors
61Inventor score
Filing activity: Dec 20, 2017 → Jul 26, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10236301B1 | Methods of forming an array of elevationally-extending strings of memory cells | Electricity | 47 | Active |
| US10446578B1 | Methods used in forming an array of elevationally-extending strings of memory cells, methods of forming an array of elevationally-extending strings of memory cells, and methods of forming an array of vertical strings of memory cells | Electricity | 25 | Active |
| US10553607B1 | Method of forming an array of elevationally-extending strings of programmable memory cells and method of forming an array of elevationally-extending strings of memory cells | Electricity | 11 | Active |
| US10283524B1 | Methods of filling horizontally-extending openings of integrated assemblies | Electricity | 9 | Active |
| US10784273B2 | Memory arrays and methods used in forming a memory array | Electricity | 8 | Active |
| US10497715B2 | Memory arrays | Electricity | 6 | Active |
| US10930658B2 | Memory arrays and methods used in forming a memory array | Electricity | 3 | Active |
| US11348939B2 | Integrated assemblies, and methods of forming integrated assemblies | Electricity | 2 | Active |
| US11948992B2 | Electronic devices comprising a dielectric material, and related systems and methods | Electricity | 2 | Active |
| US11315877B2 | Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems | Electricity | 1 | Active |
| US11737278B2 | Memory arrays and methods used in forming a memory array comprising strings of memory cells | Electricity | 1 | Active |
| US10573661B2 | Methods of filling horizontally-extending openings of integrated assemblies | Electricity | 1 | Active |
| US11302708B2 | Memory arrays, and methods of forming memory arrays | Electricity | 1 | Active |
| US11737275B2 | Microelectronic devices including filled slits and memory cell pillars, and related memory devices and electronic systems | Electricity | 0 | Active |
| US12063782B2 | Integrated assemblies having metal-containing liners along bottoms of trenches, and methods of forming integrated assemblies | Electricity | 0 | Active |
| US12356619B2 | Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells | Electricity | 0 | Active |
| US11545430B2 | Integrated circuitry and method used in forming a memory array comprising strings of memory cells | Electricity | 0 | Active |
| US12396172B2 | Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells | Electricity | 0 | Active |
| US10748922B2 | Memory arrays and methods used in forming a memory array | Electricity | 0 | Active |
| US11075215B2 | Memory arrays and methods used in forming a memory array | Electricity | 0 | Active |
| US11355392B2 | Conductive via of integrated circuitry, memory array comprising strings of memory cells, method of forming a conductive via of integrated circuitry, and method of forming a memory array comprising strings of memory cells | Electricity | 0 | Active |
| US11411015B2 | Memory arrays and methods used in forming a memory array | Electricity | 0 | Active |
| US12424282B2 | Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells | Electricity | 0 | Active |
| US11871566B2 | Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells | Electricity | 0 | Active |
| US11678483B2 | Memory arrays and methods used in forming a memory array | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.