Method and system for monitoring substrate processing apparatus
US12068140B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2021 |
| Grant date | Aug 20, 2024 |
| Priority date | — |
| Expiry date | Oct 27, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68735
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of monitoring a substrate processing apparatus includes applying a high-frequency radio frequency (RF) power signal and a low-frequency RF power signal from a bias power supply apparatus to an electrostatic chuck of a process chamber through a matching circuit. The method further includes applying a direct current (DC) power signal from a DC power supply apparatus to an edge ring of the process chamber through a high-frequency filter and a low-frequency filter. The method further includes measuring a low-frequency RF voltage value at a first point between the matching circuit and the electrostatic chuck, measuring the low-frequency RF voltage value at a second point between the high-frequency filter and the low-frequency filter, and acquiring a voltage ratio between the low-frequency RF voltage value at the first point and the low-frequency RF voltage value at the second point. The method further includes monitoring a state of the edge ring by comparing a threshold with the voltage ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.