Anisotropic sige:b epitaxial film growth for gate all around transistor
US12068155B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2021 |
| Grant date | Aug 20, 2024 |
| Priority date | — |
| Expiry date | Feb 27, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments described herein relate to a method of epitaxial deposition of p-channel metal oxide semiconductor (MMOS) source/drain regions within horizontal gate all around (hGAA) device structures. Combinations of precursors are described herein, which grow of the source/drain regions on predominantly <100> surfaces with reduced or negligible growth on <110> surfaces. Therefore, growth of the source/drain regions is predominantly located on the top surface of a substrate instead of the alternating layers of the hGAA structure. The precursor combinations include a silicon containing precursor, a germanium containing precursor, and a boron containing precursor. At least one of the precursors further includes chlorine.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.