Method for implant and anneal for high voltage field effect transistors
US12068161B1 · kind B1 · utility
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9Claims
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Key dates
| Filing date | Oct 7, 2022 |
| Grant date | Aug 20, 2024 |
| Priority date | — |
| Expiry date | Oct 7, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In an example, the present invention provides a method of forming a semiconductor device on a gallium and nitrogen containing material. The method includes providing a substrate member comprising a surface region, the substrate member comprising a gallium and nitrogen bearing material. The method includes causing an implanted species to electrically activate the implant profile while removing one or more crystalline damage from the epitaxial material to change the amorphous state to a single crystalline state, and thereby creating a substantially electrically activated crystalline material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.