Semiconductor device and method for fabricating the same

US12068309B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Chih-Kai Hsu · Tainan, TW
• Ssu-I Fu
• Yu-Hsiang Lin · Yuanchang, TW
• Chien-Ting Lin · Tainan, TW
• Chia-Jung Hsu · Hsinchu, TW
• Chun-Ya Chiu · Tainan, TW
• Chin-Hung Chen · Tainan, TW

Key dates

• Filing date: Jan 27, 2022
• Grant date: Aug 20, 2024
• Expiry date: Mar 5, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0142

Abstract

A method for fabricating a semiconductor device includes first providing a substrate having a high-voltage (HV) region, a medium-voltage (MV) region, and a low-voltage (LV) region, forming a HV device on the HV region, and forming a LV device on the LV region. Preferably, the HV device includes a first base on the substrate, a first gate dielectric layer on the first base, and a first gate electrode on the first gate dielectric layer. The LV device includes a fin-shaped structure on the substrate, and a second gate electrode on the fin-shaped structure, in which a top surface of the first gate dielectric layer is lower than a top surface of the fin-shaped structure.