Reverse conducting insulated gate power semiconductor device having low conduction losses
US12068312B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2020 |
| Grant date | Aug 20, 2024 |
| Priority date | — |
| Expiry date | Jul 7, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/144
Abstract
A reverse conducting insulated gate power semiconductor device is provided which comprises a plurality of active unit cells (40) and a pilot diode unit cell (50) comprising a second conductivity type anode region (51) in direct contact with a first main electrode (21) and extending from a first main side (11) to a first depth (d1). Each active unit cell (40) comprises a first conductivity type first source layer (41a) in direct contact with the first main electrode (21), a second conductivity type base layer (42) and a first gate electrode (47a), which is separated from the first source layer (41a) and the second conductivity type base layer (42) by a first gate insulating layer (46a) to form a first field effect transistor structure. A lateral size (w) of the anode region (51) in an orthogonal projection onto a vertical plane perpendicular to the first main side (11) is equal to or less than 1 μm. On a first lateral side surface of the anode region (51) a first insulating layer (52a) is arranged and on an opposing second lateral side surface of the anode region (51) a second insulating layer (52b) is arranged. And a distance between the first insulating layer (52a) and the second …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.