Semiconductor devices and method of manufacturing the same
US12068369B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2023 |
| Grant date | Aug 20, 2024 |
| Priority date | — |
| Expiry date | Jul 7, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0151
Abstract
A semiconductor device includes a device isolation layer on a substrate; pattern groups including fin patterns extending in a first direction; and gate structures extending in a second direction to intersect the fin patterns. A first pattern group, among the pattern groups, may include first fin patterns. At least a portion of the first fin patterns may be arranged with a first pitch in the second direction. The first pattern group may include a first planar portion extending from a first recess portion. A central axis of the first recess portion may be spaced apart from a central axis of one of the first fin patterns by a first distance in the second direction. The first planar portion may have a first width in the second direction and being greater than the first pitch. The first distance may be about 0.8 times to about 1.2 times the first pitch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.