Thin film anisotropic magnetoresistor device and formation
US12069956B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2021 |
| Grant date | Aug 20, 2024 |
| Priority date | — |
| Expiry date | Mar 27, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N59/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Apparatus, and their methods of manufacture, including an integrated circuit device having metallization layers for interconnecting underlying electronic devices. Contacts contact conductors of an uppermost one of the metallization layers. A planarized first dielectric layer covers the contacts and the uppermost one of the metallization layers. An anisotropic magnetoresistive (AMR) stack is on the first dielectric layer between vertically aligned portions of an etch stop layer formed on the first dielectric layer and a second dielectric layer formed on the etch stop layer. Vias extend through the first dielectric layer to electrically connect the AMR stack and the contacts. A chemical-mechanical planarization (CMP) stop layer is on the AMR stack. A third dielectric layer is on the CMP stop layer. A passivation layer contacts the second dielectric layer portions, the third dielectric layer, and each opposing end of the AMR stack and the CMP stop layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.