Thin film structure including dielectric material layer, and method of manufacturing the same, and electronic device employing the same
US12071690B2 · kind B2 · utility
1Cited by
1References
19Claims
0Family size
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Key dates
| Filing date | Mar 24, 2020 |
| Grant date | Aug 27, 2024 |
| Priority date | — |
| Expiry date | Dec 2, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A thin film structure including a dielectric material layer, a method of manufacturing the same, and an electronic device employing the same are disclosed. The disclosed thin film structure includes a first conductive layer; a first dielectric material layer on the first conductive layer, the first dielectric material layer having a crystal phase and including a metal oxide; an InxOy-based seed material layer formed on the first dielectric material layer and having a thickness less than a thickness of the first dielectric material layer; and a second conductive layer formed on the seed material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.