Scintillator, measuring device, mass spectrometer, and electron microscope
US12072454B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2020 |
| Grant date | Aug 27, 2024 |
| Priority date | — |
| Expiry date | Jun 17, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2443
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
Provided are a scintillator and the like capable of improving emission intensity. A scintillator (S) comprises a sapphire substrate (6), a GaN layer (4) that is provided on the incident side to the sapphire substrate (6) and includes GaN, a quantum well structure (3) provided on the incident side to the GaN layer (4), and a conductive layer (2) provided on the incident side to the quantum well structure (3), wherein a plurality of emitting layers (21) including InGaN and a plurality of barrier layers (22) including GaN are alternatively stacked in the quantum well structure (3), and an oxygen-containing layer (23) including oxygen is provided between the quantum well structure (3) and the conductive layer (2).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.