Patent · US Active

Resist underlayer film-forming composition including cyclic carbonyl compound

US12072630B2 · kind B2 · utility

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2References
13Claims
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Key dates

Filing dateMay 21, 2019
Grant dateAug 27, 2024
Priority date
Expiry dateAug 9, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/0276
  • WIPO fieldMacromolecular chemistry, polymers
  • WIPO sectorChemistry

Abstract

A resist underlayer film-forming composition formed into a flat film which can exhibit high etching resistance, a good dry etching velocity ratio and a good optical constant, has a good covering property even against a so-called step-structure substrate, and has a small film thickness difference after being embedded. Also, a method for producing a polymer suitable for the resist underlayer film-forming composition; a resist underlayer film using the resist underlayer film-forming composition; and a method for manufacturing a semiconductor device. A resist underlayer film-forming composition containing a reaction product of an aromatic compound having 6 to 60 carbon atoms with a carbonyl group in a cyclic carbonyl compound having 3 to 60 carbon atoms and a solvent, wherein the reaction product has such a structure that one of the carbon atoms in the cyclic carbonyl compound links two molecules of the aromatic compound to each other.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.