Patent · US Active

Memory device that includes a duty correction circuit, memory controller that includes a duty sensing circuit, and storage device that includes a memory device

US12073917B2 · kind B2 · utility

0Cited by
6References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 17, 2021
Grant dateAug 27, 2024
Priority date
Expiry dateJul 26, 2042

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C5/145
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A storage device includes a plurality of memory chips and a chip. The plurality of memory chips includes a first memory chip configured to generate a first signal based on a first clock signal, and a second memory chip configured to generate a second signal based on a second clock signal. The chip is configured to receive the first and second signals and generate and output a first and second comparison signal based on a duty cycle of the first and second signals. The first memory chip is further configured to generate a first corrected signal by adjusting a duty cycle of the first clock signal based on the first comparison signal, and the second memory chip is further configured to generate a second corrected signal by adjusting a duty cycle of the second clock signal based on the second comparison signal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.