Source/drain structures and method of forming
US12074071B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2023 |
| Grant date | Aug 27, 2024 |
| Priority date | — |
| Expiry date | Mar 6, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device includes a first device region and a second device region. The first device region includes a first source/drain region extending from a substrate and a first and a second pair of spacers. The first source/drain region extends between the first pair of spacers and the second pair of spacers. The first pair of spacers and the second pair of spacers have a first height. The second device region includes a second and a third source/drain region extending from the substrate and a third and a fourth pair of spacers. The third source/drain region is separate from the second source/drain region. The second source/drain region extends between the third pair of spacers. The third source/drain region extends between the fourth pair of spacers. The third pair of spacers and the fourth pair of spacers have a second height greater than the first height.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.