Semiconductor device with improved temperature uniformity
US12074198B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2021 |
| Grant date | Aug 27, 2024 |
| Priority date | — |
| Expiry date | Aug 18, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/252
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A tub of a semiconductor device includes a cool zone with a first projected operating temperature and a hot zone with a second projected operating temperature greater than the first projected operating temperature. A design parameter has a first value in the cool zone and a second value different from the first value in the hot zone. The difference configures the tub to dissipate less heat in the hot zone during operation of the semiconductor device than would be dissipated if the first and second values were equal. The design parameter may be, for example, a tub width, a source structure width, a JFET region width, a channel length, a channel width, a length of a gate, a displacement of a center of the gate relative to a center of a JFET region, a dopant concentration, or a combination thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.