Inventor · Bend, OR, US

Dumitru Sdrulla

22Patents
6h-index
24Co-inventors
69Inventor score

Filing activity: Jan 31, 1994 → Nov 2, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US5648283A High density power device fabrication process using undercut oxide sidewalls Electricity 114 Expired
US5528058A IGBT device with platinum lifetime control and reduced gaw Electricity 65 Expired
US7851881B1 Schottky barrier diode (SBD) and its off-shoot merged PN/Schottky diode or junction barrier Schottky (JBS) diode Electricity 51 Active
US7169634B2 Design and fabrication of rugged FRED Emerging Cross-Sectional Technologies 24 Expired
US8436367B1 SiC power vertical DMOS with increased safe operating area Electricity 16 Active
US7671410B2 Design and fabrication of rugged FRED, power MOSFET or IGBT Emerging Cross-Sectional Technologies 6 Active
US8674439B2 Low loss SiC MOSFET Electricity 6 Active
US9040377B2 Low loss SiC MOSFET Electricity 3 Active
US8476691B1 High reliability-high voltage junction termination with charge dissipation layer Electricity 3 Active
US9478606B2 SiC transient voltage suppressor Electricity 2 Active
US8841718B2 Pseudo self aligned radhard MOSFET and process of manufacture Electricity 2 Active
US10811494B2 Method and assembly for mitigating short channel effects in silicon carbide MOSFET devices Electricity 1 Active
US11764209B2 Power semiconductor device with forced carrier extraction and method of manufacture Electricity 1 Active
US8110888B2 Edge termination for high voltage semiconductor device Electricity 1 Active
US10566416B2 Semiconductor device with improved field layer Electricity 0 Active
US11830943B2 RF SiC MOSFET with recessed gate dielectric Electricity 0 Active
US12081177B2 Bridged class-D RF amplifier circuit Electricity 0 Active
US12074226B2 Schottky diode integrated with a semiconductor device Electricity 0 Active
US11901406B2 Semiconductor high-voltage termination with deep trench and floating field rings Electricity 0 Active
US12074198B2 Semiconductor device with improved temperature uniformity Electricity 0 Active
US11158703B2 Space efficient high-voltage termination and process for fabricating same Electricity 0 Active
US12224343B2 Power device with partitioned active regions Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.