Nitride-based semiconductor device and method for manufacturing the same
US12074202B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2021 |
| Grant date | Aug 27, 2024 |
| Priority date | — |
| Expiry date | Feb 4, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/117
Abstract
A nitride-based semiconductor device includes a first and a second nitride-based semiconductor layers, a source electrode, a gate electrode, and a drain structure. The drain structure includes a first doped nitride-based semiconductor layer, an ohmic contact electrode, and a conductive layer. The first doped nitride-based semiconductor layer is in contact with the second nitride-based semiconductor layer to form a first contact interface. The ohmic contact electrode is in contact with the second nitride-based semiconductor layer to form a second contact interface. The conductive layer includes metal and in contact with the second nitride-based semiconductor layer to form a metal-semiconductor junction therebetween. The conductive layer is connected to the first doped nitride-based semiconductor layer and the ohmic contact electrode, and the ohmic contact interface is farther away from the gate electrode than the first contact interface and the second contact interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.