Schottky diode integrated with a semiconductor device
US12074226B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 14, 2021 |
| Grant date | Aug 27, 2024 |
| Priority date | — |
| Expiry date | Feb 23, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/105
Abstract
A semiconductor device comprises a semiconductor die having a first region and a second region, wherein an operating temperature of the second region is lower than an operating temperature of the first region. A plurality of first tubs are respectively disposed in the first region, the second region, or both. The semiconductor device further comprises a power device comprising a plurality of power device cells, and a diode having a plurality of diode cells. The power devices cells are disposed within tubs or portions of tubs that are in the first region, and the diode cells are disposed within tubs or portions of tubs that are in the second region. The power device may comprise a vertical metal oxide semiconductor field effect transistor (MOSFET), and the diode may comprise a vertical Schottky barrier diode (SBD).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.