Semiconductor structure and method for forming the same
US12075707B2 · kind B2 · utility
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Key dates
| Filing date | Jul 25, 2023 |
| Grant date | Aug 27, 2024 |
| Priority date | — |
| Expiry date | Jul 25, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for fabricating magnetic tunnel junction (MTJ) pillars is provided. The method includes following operations. A MTJ stack of layers including a first magnetic layer, a tunnel barrier layer overlying the first magnetic layer, and a second magnetic layer overlying the tunnel barrier layer is provided. A first patterning step is carried out by using a reactive ion etching. In the first patterning step, the second magnetic layer and the tunnel barrier layer are etched to form one or more pillar structures and a protection layer is formed and covers sidewalls of the pillar structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.