Polishing pad with improved crosslinking density and process for preparing the same
US12076832B2 · kind B2 · utility
0Cited by
0References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2020 |
| Grant date | Sep 3, 2024 |
| Priority date | — |
| Expiry date | Nov 28, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
The present invention provides a polishing pad whose crosslinking density is adjusted to enhance the performance of the CMP process such as polishing rate and cut pad rate. In addition, in the process for preparing a polishing pad according to the embodiment, it is possible to implement such a crosslinking density by a simple method of controlling the preheating temperature of the mold for curing. Thus, the polishing pad may be applied to a process of preparing a semiconductor device, which comprises a CMP process, to provide a semiconductor device such as a wafer of excellent quality.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.