In-situ film growth rate monitoring apparatus, systems, and methods for substrate processing
US12077880B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2021 |
| Grant date | Sep 3, 2024 |
| Priority date | — |
| Expiry date | Oct 3, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/26
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Embodiments of the present disclosure generally relate to apparatus, systems, and methods for in-situ film growth rate monitoring. A thickness of a film on a substrate is monitored during a substrate processing operation that deposits the film on the substrate. The thickness is monitored while the substrate processing operation is conducted. The monitoring includes directing light in a direction toward a crystalline coupon. The direction is perpendicular to a heating direction. In one implementation, a reflectometer system to monitor film growth during substrate processing operations includes a first block that includes a first inner surface. The reflectometer system includes a light emitter disposed in the first block and oriented toward the first inner surface, and a light receiver disposed in the first block and oriented toward the first inner surface. The reflectometer system includes a second block opposing the first block.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.