Low temperature deposition of pure molybdenum films
US12080558B2 · kind B2 · utility
0Cited by
8References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2023 |
| Grant date | Sep 3, 2024 |
| Priority date | — |
| Expiry date | Oct 12, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53257
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for depositing molybdenum films on a substrate are described. The substrate is exposed to a molybdenum halide precursor and an aluminum precursor to form the molybdenum film (e.g., elemental molybdenum) at a low temperature. The exposures can be sequential or simultaneous.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.