Semiconductor device and method for manufacturing the same
US12080638B2 · kind B2 · utility
0Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Jul 29, 2022 |
| Grant date | Sep 3, 2024 |
| Priority date | — |
| Expiry date | Jul 29, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a dielectric interposer, a first redistribution layer, a second redistribution layer and conductive structures. The conductive structures are through the dielectric interposer, wherein the conductive structures are electrically connected to the first redistribution layer and the second redistribution layer. Each of the conductive structures has a tapered profile. A width of each of the conductive structures proximal to the first redistribution layer is narrower than a width of each of the conductive structure proximal to the second redistribution layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.