Semiconductor devices and methods of manufacturing semiconductor devices
US12080682B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2023 |
| Grant date | Sep 3, 2024 |
| Priority date | — |
| Expiry date | Mar 8, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one example, a semiconductor device comprises a first base substrate comprising a first base conductive structure, a first encapsulant contacting a lateral side of the first base substrate, a redistribution structure (RDS) substrate over the base substrate and comprising an RDS conductive structure coupled with the first base conductive structure, a first electronic component over the RDS substrate and over a first component terminal coupled with the RDS conductive structure, and a second encapsulant over the RDS substrate and contacting a lateral side of the first electronic component. Other examples and related methods are also disclosed herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.