Method for producing an optoelectronic device comprising microLEDs
US12080824B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 22, 2021 |
| Grant date | Sep 3, 2024 |
| Priority date | — |
| Expiry date | Mar 9, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/815
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing an optoelectronic device having nitride-based microLEDs includes providing an assembly having at least one growth substrate and a nitride structure, where the nitride structure has a semipolar nitride layer that includes an active stack and crystallites extending from facets of the growth substrate with a crystalline orientation {111} to the first face of the semipolar nitride layer and providing an integrated control circuit featuring electric connection pads. The assembly is placed on the integrated control circuit, the growth substrate and the crystallites are removed, and trenches are formed in the stack so as to delimit a plurality of islets, each islet being configured to form a microLED.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.